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Cobalt disilicide (CoSi2)

Cobalt disilicide (CoSi2) has low resistivity and good thermal stability. It is currently widely used as a contact in large-scale integrated circuits, and CoSi2 has a crystal structure similar to Si, so epitaxial CoSi2 can be formed on a Si substrate /Si structure, used to study the interface characteristics of epitaxial metal silicon.
Molecular weight:115.104
Density:4.9 g/cm3
Colour:gray
Melting point:1326 °C
Boiling point:5100ºC
CAS NO.:12017-12-8
EINECS (EC NO.):234-616-8
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Cobalt disilicide (CoSi2)
Product Description
Cobalt disilicide (CoSi2) has low resistivity and good thermal stability. It is currently widely used as a contact in large-scale integrated circuits, and CoSi2 has a crystal structure similar to Si, so epitaxial CoSi2 can be formed on a Si substrate /Si structure, used to study the interface characteristics of epitaxial metal silicon.
Product Features
1.High purity: the highest purity can reach 99.99%, XRD detect no impurity phase;
2.Concentrated distribution: standard normal particle size distribution, no bimodal or multimodal.
Technical Date
Model APS(D50) Purity(%) O(%) N(%) C(%) Si(%)
CoSi20020 1.0-3.0um >99.5 ≤.0.8 ≤0.05 ≤0.05 46.3~48.8
CoSi20008 -325mesh >99.9 ≤0.30 ≤0.05 ≤0.05 46.3~48.8
Customized chemical composition and particle size can be made according to customer requirements.
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